KSP2907ATA Overview

In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -1.6V allows maximum design flexibility.A VCE saturation (Max) of 1.6V @ 50mA, 500mA means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.This device has a current rating of -600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.An input voltage of 60V volts is the breakdown voltage.During maximum operation, collector current can be as low as 600mA volts.

KSP2907ATA Features

the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz

KSP2907ATA Applications

There are a lot of ON Semiconductor KSP2907ATA applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface