2SC5964-TD-H Overview

In this device, the DC current gain is 200 @ 100mA 2V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 290mV @ 100mA, 2A.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

2SC5964-TD-H Features

the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 290mV @ 100mA, 2A
the emitter base voltage is kept at 6V

2SC5964-TD-H Applications

There are a lot of ON Semiconductor 2SC5964-TD-H applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface