ZXTN25012EFHTA Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 500 @ 10mA 2V.A collector emitter saturation voltage of 190mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 190mV @ 120mA, 6A.Single BJT transistor is recommended to keep the continuous collector voltage at 6A in order to achieve high efficiency.An emitter's base voltage can be kept at 7V to gain high efficiency.Parts of this part have transition frequencies of 260MHz.This device can take an input voltage of 12V volts before it breaks down.A maximum collector current of 6A volts can be achieved.

ZXTN25012EFHTA Features

the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of 190mV
the vce saturation(Max) is 190mV @ 120mA, 6A
the emitter base voltage is kept at 7V
a transition frequency of 260MHz

ZXTN25012EFHTA Applications

There are a lot of Diodes Incorporated ZXTN25012EFHTA applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter