CP305-2N3019-CT20 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CP305-2N3019-CT20 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-65°C~150°C TJ
Packaging
Tray
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$150.520000
$150.52
10
$142.000000
$1420
100
$133.962264
$13396.2264
500
$126.379494
$63189.747
1000
$119.225938
$119225.938
CP305-2N3019-CT20 Product Details
CP305-2N3019-CT20 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Supplier package Die contains the product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.During maximum operation, collector current can be as low as 1A volts.
CP305-2N3019-CT20 Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 500mV @ 50mA, 500mA the supplier device package of Die
CP305-2N3019-CT20 Applications
There are a lot of Central Semiconductor Corp CP305-2N3019-CT20 applications of single BJT transistors.