CPH3114-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
CPH3114-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Mounting Type
Surface Mount
Package / Case
SC-96
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
900mW
Pin Count
3
Power - Max
900mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
15V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
180mV @ 15mA, 750mA
Collector Emitter Breakdown Voltage
15V
Frequency - Transition
350MHz
Collector Base Voltage (VCBO)
15V
Emitter Base Voltage (VEBO)
5V
hFE Min
200
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.096400
$0.0964
500
$0.070882
$35.441
1000
$0.059069
$59.069
2000
$0.054191
$108.382
5000
$0.050646
$253.23
10000
$0.047113
$471.13
15000
$0.045564
$683.46
50000
$0.044802
$2240.1
CPH3114-TL-E Product Details
CPH3114-TL-E Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 180mV @ 15mA, 750mA.The emitter base voltage can be kept at 5V for high efficiency.A maximum collector current of 1.5A volts can be achieved.
CPH3114-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 180mV @ 15mA, 750mA the emitter base voltage is kept at 5V
CPH3114-TL-E Applications
There are a lot of ON Semiconductor CPH3114-TL-E applications of single BJT transistors.