BCX51-16,115 Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The part has a transition frequency of 50MHz.Input voltage breakdown is available at 45V volts.A maximum collector current of 1A volts is possible.

BCX51-16,115 Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz

BCX51-16,115 Applications

There are a lot of Nexperia USA Inc. BCX51-16,115 applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface