CXT5551 TR PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CXT5551 TR PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Surface Mount
Package / Case
TO-243AA
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
1.2W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
160V
Current - Collector (Ic) (Max)
600mA
Frequency - Transition
300MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.086277
$1.086277
10
$1.024790
$10.2479
100
$0.966783
$96.6783
500
$0.912059
$456.0295
1000
$0.860433
$860.433
CXT5551 TR PBFREE Product Details
CXT5551 TR PBFREE Overview
This device has a DC current gain of 80 @ 10mA 5V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Collector Emitter Breakdown occurs at 160VV - Maximum voltage.
CXT5551 TR PBFREE Features
the DC current gain for this device is 80 @ 10mA 5V the vce saturation(Max) is 200mV @ 5mA, 50mA
CXT5551 TR PBFREE Applications
There are a lot of Central Semiconductor Corp CXT5551 TR PBFREE applications of single BJT transistors.