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CXT5551 TR PBFREE

CXT5551 TR PBFREE

CXT5551 TR PBFREE

Central Semiconductor Corp

CXT5551 TR PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

CXT5551 TR PBFREE Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature -65°C~150°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.2W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 160V
Current - Collector (Ic) (Max) 600mA
Frequency - Transition 300MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.086277 $1.086277
10 $1.024790 $10.2479
100 $0.966783 $96.6783
500 $0.912059 $456.0295
1000 $0.860433 $860.433
CXT5551 TR PBFREE Product Details

CXT5551 TR PBFREE Overview


This device has a DC current gain of 80 @ 10mA 5V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Collector Emitter Breakdown occurs at 160VV - Maximum voltage.

CXT5551 TR PBFREE Features


the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA

CXT5551 TR PBFREE Applications


There are a lot of Central Semiconductor Corp CXT5551 TR PBFREE applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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