BC847BTT1G

new-10%

Manufacturer part number:BC847BTT1G

Manufacturer:ON Semiconductor

Description:BC847BTT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:BC847BTT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2004
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Other Transistors
Voltage - Rated DC	45V
Max Power Dissipation	200mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	100mA
Frequency	100MHz
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	BC847*TT
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	300mW
Power - Max	225mW
Transistor Application	AMPLIFIER
Halogen Free	Halogen Free
Gain Bandwidth Product	100MHz
Polarity/Channel Type	NPN
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	45V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA 5V
Current - Collector Cutoff (Max)	15nA ICBO
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage	45V
Transition Frequency	100MHz
Collector Emitter Saturation Voltage	600mV
Max Breakdown Voltage	45V
Collector Base Voltage (VCBO)	50V
Emitter Base Voltage (VEBO)	6V
hFE Min	200
Height	900μm
Length	1.8mm
Width	900μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free