PBSS4630PA,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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PBSS4630PA,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-PowerUDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
2.1W
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Frequency
115MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
PBSS4630
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
115MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
260 @ 2A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
275mV @ 300mA, 6A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
115MHz
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
6V
hFE Min
180
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
PBSS4630PA,115 Product Details
PBSS4630PA,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 260 @ 2A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 275mV @ 300mA, 6A.Emitter base voltages of 6V can achieve high levels of efficiency.115MHz is present in the transition frequency.A breakdown input voltage of 30V volts can be used.Maximum collector currents can be below 6A volts.
PBSS4630PA,115 Features
the DC current gain for this device is 260 @ 2A 2V the vce saturation(Max) is 275mV @ 300mA, 6A the emitter base voltage is kept at 6V a transition frequency of 115MHz
PBSS4630PA,115 Applications
There are a lot of Nexperia USA Inc. PBSS4630PA,115 applications of single BJT transistors.