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CZDM1003N BK

CZDM1003N BK

CZDM1003N BK

Central Semiconductor Corp

MOSFET (Metal Oxide) N-Channel 150m Ω @ 2A, 10V 20V 975pF @ 25V 15nC @ 10V 100V TO-261-4, TO-261AA

SOT-23

CZDM1003N BK Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Operating Temperature-55°C~150°C TJ
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 150m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 975pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) 20V
In-Stock:1307 items

CZDM1003N BK Product Details

CZDM1003N BK Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 975pF @ 25V maximal input capacitance.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

CZDM1003N BK Features


a 100V drain to source voltage (Vdss)


CZDM1003N BK Applications


There are a lot of Central Semiconductor Corp
CZDM1003N BK applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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