SI6410DQ-T1-GE3

new-10%

Manufacturer part number:SI6410DQ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 7.8A 8-TSSOP

Case Package:SOT-23

Datasheet:SI6410DQ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173, 4.40mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA (Min)
Gate Charge (Qg) (Max) @ Vgs	33nC @ 5V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	7.8A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	30A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant