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IRL1104STRLPBF

IRL1104STRLPBF

IRL1104STRLPBF

Infineon Technologies

MOSFET N-CH 40V 104A D2PAK

SOT-23

IRL1104STRLPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.4W Ta 167W Tc
Element Configuration Single
Power Dissipation 167W
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8mOhm @ 62A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3445pF @ 25V
Current - Continuous Drain (Id) @ 25°C 104A Tc
Gate Charge (Qg) (Max) @ Vgs 68nC @ 4.5V
Rise Time 257ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 64 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 104A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 40V
Input Capacitance 3.445nF
Drain to Source Resistance 8mOhm
Rds On Max 8 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant

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