IXFX74N50P2

new-10%

Manufacturer part number:IXFX74N50P2

Manufacturer:IXYS

Description:MOSFET N-CH 500V 74A PLUS247

Case Package:SOT-23

Datasheet:IXFX74N50P2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	247
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	HiPerFET™, PolarHV™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1400W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.4kW
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	77m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	9900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	74A Tc
Gate Charge (Qg) (Max) @ Vgs	165nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	74A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.077Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	185A
Avalanche Energy Rating (Eas)	3000 mJ
RoHS Status	RoHS Compliant