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PBHV9050T,215

PBHV9050T,215

PBHV9050T,215

Nexperia USA Inc.

PBHV9050T,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBHV9050T,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number PBHV9050
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 50mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 200mV @ 10mA, 50mA
Collector Emitter Breakdown Voltage 500V
Transition Frequency 50MHz
Max Breakdown Voltage 500V
Collector Base Voltage (VCBO) 500V
Emitter Base Voltage (VEBO) -6V
hFE Min 80
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.17820 $0.5346
6,000 $0.16830 $1.0098
15,000 $0.16335 $2.45025
PBHV9050T,215 Product Details

PBHV9050T,215 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 50mA 10V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 10mA, 50mA.Keeping the emitter base voltage at -6V allows for a high level of efficiency.In this part, there is a transition frequency of 50MHz.As a result, it can handle voltages as low as 500V volts.Collector current can be as low as 150mA volts at its maximum.

PBHV9050T,215 Features


the DC current gain for this device is 80 @ 50mA 10V
the vce saturation(Max) is 200mV @ 10mA, 50mA
the emitter base voltage is kept at -6V
a transition frequency of 50MHz

PBHV9050T,215 Applications


There are a lot of Nexperia USA Inc. PBHV9050T,215 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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