PBHV9050T,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBHV9050T,215 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
50MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
PBHV9050
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500V
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 50mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
200mV @ 10mA, 50mA
Collector Emitter Breakdown Voltage
500V
Transition Frequency
50MHz
Max Breakdown Voltage
500V
Collector Base Voltage (VCBO)
500V
Emitter Base Voltage (VEBO)
-6V
hFE Min
80
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.17820
$0.5346
6,000
$0.16830
$1.0098
15,000
$0.16335
$2.45025
PBHV9050T,215 Product Details
PBHV9050T,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 50mA 10V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 10mA, 50mA.Keeping the emitter base voltage at -6V allows for a high level of efficiency.In this part, there is a transition frequency of 50MHz.As a result, it can handle voltages as low as 500V volts.Collector current can be as low as 150mA volts at its maximum.
PBHV9050T,215 Features
the DC current gain for this device is 80 @ 50mA 10V the vce saturation(Max) is 200mV @ 10mA, 50mA the emitter base voltage is kept at -6V a transition frequency of 50MHz
PBHV9050T,215 Applications
There are a lot of Nexperia USA Inc. PBHV9050T,215 applications of single BJT transistors.