2N3904TA Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.A collector emitter saturation voltage of 300mV ensures maximum design flexibility.When VCE saturation is 300mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.300MHz is present in the transition frequency.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 200mA volts.

2N3904TA Features

the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz

2N3904TA Applications

There are a lot of ON Semiconductor 2N3904TA applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver