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C3M0016120K

C3M0016120K

C3M0016120K

Cree/Wolfspeed

SiCFET (Silicon Carbide) N-Channel Tube 22.3mOhm @ 75A, 15V +15V, -4V 6085pF @ 1000V 211nC @ 15V 1.2kV TO-247-4

SOT-23

C3M0016120K Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Through Hole
Package / Case TO-247-4
Supplier Device Package TO-247-4
Operating Temperature -40°C~175°C TJ
Packaging Tube
Series C3M™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 556W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 22.3mOhm @ 75A, 15V
Vgs(th) (Max) @ Id 3.6V @ 23mA
Input Capacitance (Ciss) (Max) @ Vds 6085pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 115A Tc
Gate Charge (Qg) (Max) @ Vgs 211nC @ 15V
Drain to Source Voltage (Vdss) 1.2kV
Drive Voltage (Max Rds On,Min Rds On) 15V
Vgs (Max) +15V, -4V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $82.06000 $82.06
500 $81.2394 $40619.7
1000 $80.4188 $80418.8
1500 $79.5982 $119397.3
2000 $78.7776 $157555.2
2500 $77.957 $194892.5
C3M0016120K Product Details

C3M0016120K Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6085pF @ 1000V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1.2kV.Using drive voltage (15V) reduces this device's overall power consumption.

C3M0016120K Features


a 1.2kV drain to source voltage (Vdss)


C3M0016120K Applications


There are a lot of Cree/Wolfspeed
C3M0016120K applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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