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DMPH4015SK3Q-13

DMPH4015SK3Q-13

DMPH4015SK3Q-13

Diodes Incorporated

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 11m Ω @ 9.8A, 10V ±25V 4234pF @ 20V 91nC @ 10V 40V TO-252-5, DPak (4 Leads + Tab), TO-252AD

SOT-23

DMPH4015SK3Q-13 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.7W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 9.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4234pF @ 20V
Current - Continuous Drain (Id) @ 25°C 14A Ta 45A Tc
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 45A
Drain Current-Max (Abs) (ID) 14A
Drain-source On Resistance-Max 0.015Ohm
Pulsed Drain Current-Max (IDM) 100A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 260 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $11.763778 $11.763778
10 $11.097903 $110.97903
100 $10.469721 $1046.9721
500 $9.877095 $4938.5475
1000 $9.318014 $9318.014
DMPH4015SK3Q-13 Product Details

DMPH4015SK3Q-13 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 260 mJ.The maximum input capacitance of this device is 4234pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 45A.As shown in the table below, the drain current of this device is 14A.There is no pulsed drain current maximum for this device based on its rated peak drain current 100A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 40V.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

DMPH4015SK3Q-13 Features


the avalanche energy rating (Eas) is 260 mJ
a continuous drain current (ID) of 45A
based on its rated peak drain current 100A.
a 40V drain to source voltage (Vdss)


DMPH4015SK3Q-13 Applications


There are a lot of Diodes Incorporated
DMPH4015SK3Q-13 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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