C3M0030090K

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Manufacturer part number:C3M0030090K

Manufacturer:Cree/Wolfspeed

Description:SiCFET (Silicon Carbide) N-Channel Tube 39mOhm @ 35A, 15V +15V, -4V 1864pF @ 600V 87nC @ 15V 900V TO-247-4

Case Package:SOT-23

Datasheet:C3M0030090K Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-4
Supplier Device Package	TO-247-4
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	C3M™
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Technology	SiCFET (Silicon Carbide)
Power Dissipation-Max	149W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	39mOhm @ 35A, 15V
Vgs(th) (Max) @ Id	3.5V @ 11mA
Input Capacitance (Ciss) (Max) @ Vds	1864pF @ 600V
Current - Continuous Drain (Id) @ 25°C	63A Tc
Gate Charge (Qg) (Max) @ Vgs	87nC @ 15V
Drain to Source Voltage (Vdss)	900V
Drive Voltage (Max Rds On,Min Rds On)	15V
Vgs (Max)	+15V, -4V
Drain to Source Resistance	30mOhm
RoHS Status	Non-RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$39.232408	$39.232408
10	$37.011705	$370.11705
100	$34.916704	$3491.6704
500	$32.940286	$16470.143
1000	$31.075742	$31075.742

C3M0030090K Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1864pF @ 600V.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 30mOhm exists between the drain and source.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 900V.Using drive voltage (15V) reduces this device's overall power consumption.