APTC60DAM18CTG

new-10%

Manufacturer part number:APTC60DAM18CTG

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 600V 143A 20-Pin Case SP-4

Case Package:SOT-23

Datasheet:APTC60DAM18CTG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP4
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	1997
Series	CoolMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	12
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Power Dissipation-Max	833W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	833W
Case Connection	ISOLATED
Turn On Delay Time	21 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18m Ω @ 71.5A, 10V
Vgs(th) (Max) @ Id	3.9V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	28000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	143A Tc
Gate Charge (Qg) (Max) @ Vgs	1036nC @ 10V
Rise Time	30ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	84 ns
Turn-Off Delay Time	283 ns
Continuous Drain Current (ID)	143A
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	572A
DS Breakdown Voltage-Min	600V
Radiation Hardening	No
RoHS Status	RoHS Compliant