2DA1774QLP-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
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2DA1774QLP-7B Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-UFDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
250mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2DA1774
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
250mW
Case Connection
COLLECTOR
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-200mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
-100mA
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.572480
$5.57248
10
$5.257057
$52.57057
100
$4.959487
$495.9487
500
$4.678762
$2339.381
1000
$4.413926
$4413.926
2DA1774QLP-7B Product Details
2DA1774QLP-7B Overview
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -200mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In order to achieve high efficiency, the continuous collector voltage should be kept at -100mA.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
2DA1774QLP-7B Features
the DC current gain for this device is 120 @ 1mA 6V a collector emitter saturation voltage of -200mV the vce saturation(Max) is 200mV @ 5mA, 50mA the emitter base voltage is kept at 5V a transition frequency of 100MHz
2DA1774QLP-7B Applications
There are a lot of Diodes Incorporated 2DA1774QLP-7B applications of single BJT transistors.