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2DA1774QLP-7B

2DA1774QLP-7B

2DA1774QLP-7B

Diodes Incorporated

2DA1774QLP-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

2DA1774QLP-7B Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2011
JESD-609 Code e4
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional FeatureHIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation250mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2DA1774
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation250mW
Case Connection COLLECTOR
Gain Bandwidth Product100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage40V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage-200mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -100mA
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:19971 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.572480$5.57248
10$5.257057$52.57057
100$4.959487$495.9487
500$4.678762$2339.381
1000$4.413926$4413.926

2DA1774QLP-7B Product Details

2DA1774QLP-7B Overview


This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -200mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In order to achieve high efficiency, the continuous collector voltage should be kept at -100mA.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

2DA1774QLP-7B Features


the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

2DA1774QLP-7B Applications


There are a lot of Diodes Incorporated 2DA1774QLP-7B applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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