2SA1552S-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SA1552S-H Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
NO
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Subcategory
Other Transistors
Max Power Dissipation
1W
Base Part Number
2SA1552
Pin Count
3
Configuration
Single
Power - Max
1W
Halogen Free
Halogen Free
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
160V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
160V
Frequency - Transition
120MHz
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
6V
hFE Min
100
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.77000
$0.77
10
$0.67700
$6.77
100
$0.51910
$51.91
500
$0.41034
$205.17
1,000
$0.32827
$0.32827
2SA1552S-H Product Details
2SA1552S-H Overview
This device has a DC current gain of 140 @ 100mA 5V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.During maximum operation, collector current can be as low as 1.5A volts.
2SA1552S-H Features
the DC current gain for this device is 140 @ 100mA 5V the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 6V
2SA1552S-H Applications
There are a lot of ON Semiconductor 2SA1552S-H applications of single BJT transistors.