BC856ALT1G Overview
In this device, the DC current gain is 125 @ 2mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -650mV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.Breakdown input voltage is 65V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC856ALT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC856ALT1G Applications
There are a lot of ON Semiconductor BC856ALT1G applications of single BJT transistors.
- Driver
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- Inverter
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- Muting
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- Interface
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