BCV47,235 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10000 @ 100mA 5V.A collector emitter saturation voltage of 1V allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 100μA, 100mA.With the emitter base voltage set at 10V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 220MHz.A breakdown input voltage of 60V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

BCV47,235 Features

the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 220MHz

BCV47,235 Applications

There are a lot of Nexperia USA Inc. BCV47,235 applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver