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BCV47,235

BCV47,235

BCV47,235

Nexperia USA Inc.

BCV47,235 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCV47,235 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number BCV47
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power - Max 250mW
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 220MHz
Collector Emitter Saturation Voltage 1V
Max Breakdown Voltage 60V
Frequency - Transition 220MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 10V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.39000 $0.39
500 $0.3861 $193.05
1000 $0.3822 $382.2
1500 $0.3783 $567.45
2000 $0.3744 $748.8
2500 $0.3705 $926.25
BCV47,235 Product Details

BCV47,235 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10000 @ 100mA 5V.A collector emitter saturation voltage of 1V allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 100μA, 100mA.With the emitter base voltage set at 10V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 220MHz.A breakdown input voltage of 60V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

BCV47,235 Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 220MHz

BCV47,235 Applications


There are a lot of Nexperia USA Inc. BCV47,235 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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