2DA2018-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
2DA2018-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-523
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power - Max
150mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 10mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 200mA
Collector Emitter Breakdown Voltage
12V
Transition Frequency
260MHz
Max Breakdown Voltage
12V
Frequency - Transition
260MHz
Collector Base Voltage (VCBO)
15V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.106880
$4.10688
10
$3.874415
$38.74415
100
$3.655109
$365.5109
500
$3.448216
$1724.108
1000
$3.253034
$3253.034
2DA2018-7 Product Details
2DA2018-7 Overview
This device has a DC current gain of 270 @ 10mA 2V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 260MHz.This device can take an input voltage of 12V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
2DA2018-7 Features
the DC current gain for this device is 270 @ 10mA 2V the vce saturation(Max) is 250mV @ 10mA, 200mA a transition frequency of 260MHz
2DA2018-7 Applications
There are a lot of Diodes Incorporated 2DA2018-7 applications of single BJT transistors.