2DB1132Q-13 Overview
This device has a DC current gain of 120 @ 100mA 3V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -125mV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.A breakdown input voltage of 32V volts can be used.Product comes in the supplier's device package SOT-89-3.This device displays a 32V maximum voltage - Collector Emitter Breakdown.Maximum collector currents can be below 1A volts.
2DB1132Q-13 Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -125mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the supplier device package of SOT-89-3
2DB1132Q-13 Applications
There are a lot of Diodes Incorporated 2DB1132Q-13 applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
