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SMBTA56E6433HTMA1

SMBTA56E6433HTMA1

SMBTA56E6433HTMA1

Infineon Technologies

SMBTA56E6433HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

SMBTA56E6433HTMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2002
Pbfree Code yes
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MBTA56
JESD-30 Code R-PDSO-G3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 330mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 100MHz
Frequency - Transition 100MHz
RoHS StatusROHS3 Compliant
In-Stock:156714 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.184576$0.184576
500$0.135718$67.859
1000$0.113098$113.098
2000$0.103760$207.52
5000$0.096972$484.86
10000$0.090206$902.06
15000$0.087240$1308.6
50000$0.085782$4289.1

SMBTA56E6433HTMA1 Product Details

SMBTA56E6433HTMA1 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.As you can see, the part has a transition frequency of 100MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

SMBTA56E6433HTMA1 Features


the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 100MHz

SMBTA56E6433HTMA1 Applications


There are a lot of Infineon Technologies SMBTA56E6433HTMA1 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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