BC640 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BC640 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
100MHz
Frequency - Transition
150MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.043560
$0.04356
500
$0.032029
$16.0145
1000
$0.026691
$26.691
2000
$0.024487
$48.974
5000
$0.022885
$114.425
10000
$0.021289
$212.89
15000
$0.020589
$308.835
50000
$0.020245
$1012.25
BC640 Product Details
BC640 Overview
DC current gain in this device equals 40 @ 150mA 2V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.There is a transition frequency of 100MHz in the part.This device displays a 80V maximum voltage - Collector Emitter Breakdown.
BC640 Features
the DC current gain for this device is 40 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA a transition frequency of 100MHz
BC640 Applications
There are a lot of Rochester Electronics, LLC BC640 applications of single BJT transistors.