2DB1386R-13 Overview
This device has a DC current gain of 180 @ 500mA 2V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of -250mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 100mA, 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.As a result, the part has a transition frequency of 100MHz.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 5A volts can be achieved.
2DB1386R-13 Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at -6V
a transition frequency of 100MHz
2DB1386R-13 Applications
There are a lot of Diodes Incorporated 2DB1386R-13 applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
