BC847BFZ-7B Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 100mA.For high efficiency, the continuous collector voltage must be kept at 100mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 180MHz.There is a breakdown input voltage of 45V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

BC847BFZ-7B Features

the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 300mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 180MHz

BC847BFZ-7B Applications

There are a lot of Diodes Incorporated BC847BFZ-7B applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting