2N2904A PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N2904A PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Surface Mount
NO
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Configuration
Single
Power - Max
600mW
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
200MHz
Frequency - Transition
200MHz
Power Dissipation-Max (Abs)
3W
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.48000
$2.48
500
$2.4552
$1227.6
1000
$2.4304
$2430.4
1500
$2.4056
$3608.4
2000
$2.3808
$4761.6
2500
$2.356
$5890
2N2904A PBFREE Product Details
2N2904A PBFREE Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 150mA 10V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.6V @ 50mA, 500mA.In the part, the transition frequency is 200MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2N2904A PBFREE Features
the DC current gain for this device is 120 @ 150mA 10V the vce saturation(Max) is 1.6V @ 50mA, 500mA a transition frequency of 200MHz
2N2904A PBFREE Applications
There are a lot of Central Semiconductor Corp 2N2904A PBFREE applications of single BJT transistors.