2DD1621T-13 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.A collector emitter saturation voltage of 400mV ensures maximum design flexibility.A VCE saturation (Max) of 400mV @ 75mA, 1.5A means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 6V to gain high efficiency.There is a transition frequency of 300MHz in the part.There is a breakdown input voltage of 25V volts that it can take.In extreme cases, the collector current can be as low as 2A volts.
2DD1621T-13 Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
2DD1621T-13 Applications
There are a lot of Diodes Incorporated 2DD1621T-13 applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
