2SB1182TLR Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 500mA 3V.When VCE saturation is 800mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at -2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).100MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 32V volts.Collector current can be as low as 2A volts at its maximum.

2SB1182TLR Features

the DC current gain for this device is 180 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz

2SB1182TLR Applications

There are a lot of ROHM Semiconductor 2SB1182TLR applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver