2DD1664R-13 Overview

DC current gain in this device equals 180 @ 100mA 3V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 280MHz.Single BJT transistor can be broken down at a voltage of 32V volts.The maximum collector current is 1A volts.

2DD1664R-13 Features

the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 280MHz

2DD1664R-13 Applications

There are a lot of Diodes Incorporated 2DD1664R-13 applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting