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2N7002E-7-F

2N7002E-7-F

2N7002E-7-F

Diodes Incorporated

2N7002E-7-F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website

SOT-23

2N7002E-7-F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Manufacturer Package Identifier 2N7002E-7-F
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 4Ohm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 370mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 540mW
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 250mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 250mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.22nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 250mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.24A
Drain to Source Breakdown Voltage 60V
Feedback Cap-Max (Crss) 5 pF
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.05460 $0.1638
6,000 $0.04800 $0.288
15,000 $0.04140 $0.621
30,000 $0.03920 $1.176
75,000 $0.03700 $2.775
150,000 $0.03260 $4.89
2N7002E-7-F Product Details

2N7002E-7-F Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 50pF @ 25V.The drain current is?the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 250mA. This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.A device's drain current is its maximum continuous current, and this device's drain current is 0.24A.It is [11 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

2N7002E-7-F Features


a continuous drain current (ID) of 250mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 11 ns

2N7002E-7-F Applications


There are a lot of Diodes Incorporated 2N7002E-7-F applications of single MOSFETs transistors.

  • LCD/LED TV
  • Micro Solar Inverter
  • General Purpose Interfacing Switch
  • DC-to-DC converters
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Industrial Power Supplies
  • Lighting
  • DC/DC converters
  • PFC stages, hard switching PWM stages and resonant switching

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