2N7002E-7-F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website
SOT-23
2N7002E-7-F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Manufacturer Package Identifier
2N7002E-7-F
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
4Ohm
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOW THRESHOLD
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
370mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
540mW
Turn On Delay Time
7 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3 Ω @ 250mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
Current - Continuous Drain (Id) @ 25°C
250mA Ta
Gate Charge (Qg) (Max) @ Vgs
0.22nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Turn-Off Delay Time
11 ns
Continuous Drain Current (ID)
250mA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.24A
Drain to Source Breakdown Voltage
60V
Feedback Cap-Max (Crss)
5 pF
Height
1mm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.05460
$0.1638
6,000
$0.04800
$0.288
15,000
$0.04140
$0.621
30,000
$0.03920
$1.176
75,000
$0.03700
$2.775
150,000
$0.03260
$4.89
2N7002E-7-F Product Details
2N7002E-7-F Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 50pF @ 25V.The drain current is?the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 250mA. This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.A device's drain current is its maximum continuous current, and this device's drain current is 0.24A.It is [11 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
2N7002E-7-F Features
a continuous drain current (ID) of 250mA a drain-to-source breakdown voltage of 60V voltage the turn-off delay time is 11 ns
2N7002E-7-F Applications
There are a lot of Diodes Incorporated 2N7002E-7-F applications of single MOSFETs transistors.
LCD/LED TV
Micro Solar Inverter
General Purpose Interfacing Switch
DC-to-DC converters
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Industrial Power Supplies
Lighting
DC/DC converters
PFC stages, hard switching PWM stages and resonant switching