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2N7002K-7

2N7002K-7

2N7002K-7

Diodes Incorporated

DIODES INC. - 2N7002K-7 - MOSFET Transistor, N Channel, 300 mA, 60 V, 2 ohm, 10 V, 1.6 V

SOT-23

2N7002K-7 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 2Ohm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 370mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 350mW
Turn On Delay Time 3.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 380mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.3nC @ 4.5V
Rise Time 3.4ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.9 ns
Turn-Off Delay Time 15.7 ns
Continuous Drain Current (ID) 300mA
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Nominal Vgs 1.6 V
Feedback Cap-Max (Crss) 5 pF
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.04232 $0.12696
6,000 $0.03720 $0.2232
15,000 $0.03209 $0.48135
30,000 $0.03038 $0.9114
75,000 $0.02868 $2.151
150,000 $0.02527 $3.7905

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