APT13005DI-G1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 8 @ 2A 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 900mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 900mV @ 1A, 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.In the part, the transition frequency is 4MHz.Maximum collector currents can be below 4A volts.
APT13005DI-G1 Features
the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 1A, 4A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
APT13005DI-G1 Applications
There are a lot of Diodes Incorporated APT13005DI-G1 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
