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JAN2N5666S

JAN2N5666S

JAN2N5666S

Microsemi Corporation

JAN2N5666S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N5666S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact PlatingLead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
Series Military, MIL-PRF-19500/455
JESD-609 Code e0
Pbfree Code no
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation1.2W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count2
JESD-30 Code O-MBFM-P2
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power Dissipation1.2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 200V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1A 5V
Current - Collector Cutoff (Max) 200nA
JEDEC-95 Code TO-5
Vce Saturation (Max) @ Ib, Ic 1V @ 5A, 1A
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 6V
RoHS StatusNon-RoHS Compliant
In-Stock:3647 items

JAN2N5666S Product Details

JAN2N5666S Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 1A 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 6V allows for a high level of efficiency.When collector current reaches its maximum, it can reach 5A volts.

JAN2N5666S Features


the DC current gain for this device is 40 @ 1A 5V
the vce saturation(Max) is 1V @ 5A, 1A
the emitter base voltage is kept at 6V

JAN2N5666S Applications


There are a lot of Microsemi Corporation JAN2N5666S applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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