JANTX2N3250A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTX2N3250A Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/323
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
360mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
360mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA 1V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Transition Frequency
250MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Turn Off Time-Max (toff)
250ns
Turn On Time-Max (ton)
70ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANTX2N3250A Product Details
JANTX2N3250A Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 10mA 1V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.As a result, the part has a transition frequency of 250MHz.A maximum collector current of 200mA volts can be achieved.
JANTX2N3250A Features
the DC current gain for this device is 50 @ 10mA 1V the vce saturation(Max) is 500mV @ 5mA, 50mA the emitter base voltage is kept at 5V a transition frequency of 250MHz
JANTX2N3250A Applications
There are a lot of Microsemi Corporation JANTX2N3250A applications of single BJT transistors.