BC817-25-7-F Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 100mA 1V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.An input voltage of 150V volts is the breakdown voltage.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.

BC817-25-7-F Features

the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC817-25-7-F Applications

There are a lot of Diodes Incorporated BC817-25-7-F applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver