JANS2N2369AUB Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 450mV @ 10mA, 100mA.
JANS2N2369AUB Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
JANS2N2369AUB Applications
There are a lot of Microsemi Corporation JANS2N2369AUB applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
