JANS2N2369AUB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANS2N2369AUB Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
33 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-SMD, No Lead
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/317
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Max Power Dissipation
600mW
Terminal Position
DUAL
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
360mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
15V
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 100mA 1V
Current - Collector Cutoff (Max)
400nA
Vce Saturation (Max) @ Ib, Ic
450mV @ 10mA, 100mA
Collector Base Voltage (VCBO)
40V
Turn Off Time-Max (toff)
18ns
Turn On Time-Max (ton)
12ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
50
$67.95640
$3397.82
JANS2N2369AUB Product Details
JANS2N2369AUB Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 450mV @ 10mA, 100mA.
JANS2N2369AUB Features
the DC current gain for this device is 20 @ 100mA 1V the vce saturation(Max) is 450mV @ 10mA, 100mA
JANS2N2369AUB Applications
There are a lot of Microsemi Corporation JANS2N2369AUB applications of single BJT transistors.