DNLS320E-13 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 400 @ 2A 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 450mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.A maximum collector current of 3A volts can be achieved.

DNLS320E-13 Features

the DC current gain for this device is 400 @ 2A 2V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 450mV @ 20mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

DNLS320E-13 Applications

There are a lot of Diodes Incorporated DNLS320E-13 applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting