ZXTP25012EZTA Overview

In this device, the DC current gain is 500 @ 10mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -70mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 285mV @ 450mA, 4.5A.Single BJT transistor is essential to maintain the continuous collector voltage at -4.5A to achieve high efficiency.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.As a result, the part has a transition frequency of 310MHz.Single BJT transistor can take a breakdown input voltage of 12V volts.During maximum operation, collector current can be as low as 4.5A volts.

ZXTP25012EZTA Features

the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of -70mV
the vce saturation(Max) is 285mV @ 450mA, 4.5A
the emitter base voltage is kept at -7V
a transition frequency of 310MHz

ZXTP25012EZTA Applications

There are a lot of Diodes Incorporated ZXTP25012EZTA applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter