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MMBT5401LT1G

  • MMBT5401LT1G
  • MMBT5401LT1G

MMBT5401LT1G

MMBT5401LT1G

ON Semiconductor

MMBT5401LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT5401LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -150V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -500mA
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MMBT5401
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage -150V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 150V
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 5V
hFE Min 50
Height 940μm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.03957 $0.11871
6,000 $0.03582 $0.21492
15,000 $0.03132 $0.4698
30,000 $0.02831 $0.8493
75,000 $0.02531 $1.89825
150,000 $0.02131 $3.1965
MMBT5401LT1G Product Details

MMBT5401LT1G  Description


MMBT5401LT1G is a Bipolar Transistors - BJT SS HV XSTR PNP 150V  .A bipolar transistor is a semiconductor device that is usually used for amplification. The device can amplify analog or digital signals. It can also switch DC or be used as an oscillator. Physically, a bipolar transistor can amplify current, but it can also be connected to a circuit designed to amplify voltage or power.


MMBT5401LT1G Features

?S and NSV Prefix for Automotive and Other Applications
?Requiring Unique Site and Control Change Requirements;AEC-Q101 Qualified and PPAP Capable
?These Devices are Pb-Free,Halogen Free/BFR Free and are RoHS Compliant



MMBT5401LT1G  Applications

?S 

?NSV Prefix for Automotive 


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