PBSS4240T,215 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 320mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 320mV @ 200mA, 2A.An emitter's base voltage can be kept at 5V to gain high efficiency.Parts of this part have transition frequencies of 230MHz.Input voltage breakdown is available at 40V volts.A maximum collector current of 2A volts is possible.

PBSS4240T,215 Features

the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 230MHz

PBSS4240T,215 Applications

There are a lot of Nexperia USA Inc. PBSS4240T,215 applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting