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BCP55TA

BCP55TA

BCP55TA

Diodes Incorporated

BCP55TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

BCP55TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1.5A
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BCP55
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Height 1.65mm
Length 6.55mm
Width 3.55mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.256630 $0.25663
10 $0.242104 $2.42104
100 $0.228400 $22.84
500 $0.215472 $107.736
1000 $0.203275 $203.275
BCP55TA Product Details

BCP55TA Overview


In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 5V for high efficiency.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As a result, the part has a transition frequency of 150MHz.There is a breakdown input voltage of 60V volts that it can take.During maximum operation, collector current can be as low as 1A volts.

BCP55TA Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 150MHz

BCP55TA Applications


There are a lot of Diodes Incorporated BCP55TA applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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