BCX54TA Overview
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.An input voltage of 45V volts is the breakdown voltage.This product comes in a SOT-89 device package from the supplier.There is a 45V maximal voltage in the device due to collector-emitter breakdown.A maximum collector current of 1A volts is possible.
BCX54TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of SOT-89
BCX54TA Applications
There are a lot of Diodes Incorporated BCX54TA applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface