Welcome to Hotenda.com Online Store!

logo
userjoin
Home

MMBTA55

MMBTA55

MMBTA55

ON Semiconductor

MMBTA55 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBTA55 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3
Weight 30mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -60V
Max Power Dissipation 350mW
Current Rating -500mA
Frequency 50MHz
Base Part Number MMBTA55
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 350mW
Power - Max 350mW
Gain Bandwidth Product 50MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 500mA
Max Frequency 50MHz
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 60V
Frequency - Transition 50MHz
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -4V
hFE Min 100
Height 930μm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.073680 $0.07368
500 $0.054176 $27.088
1000 $0.045147 $45.147
2000 $0.041419 $82.838
5000 $0.038710 $193.55
10000 $0.036009 $360.09
15000 $0.034825 $522.375
50000 $0.034243 $1712.15
MMBTA55 Product Details

MMBTA55 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.Keeping the emitter base voltage at -4V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.Single BJT transistor can be broken down at a voltage of 60V volts.Single BJT transistor comes in a supplier device package of SOT-23-3.The device exhibits a collector-emitter breakdown at 60V.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

MMBTA55 Features


the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
the supplier device package of SOT-23-3

MMBTA55 Applications


There are a lot of ON Semiconductor MMBTA55 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News