MMBT2369LT3G Overview
DC current gain in this device equals 40 @ 10mA 350mV, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 1mA, 10mA.Emitter base voltages of 4.5V can achieve high levels of efficiency.A maximum collector current of 200mA volts is possible.
MMBT2369LT3G Features
the DC current gain for this device is 40 @ 10mA 350mV
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
MMBT2369LT3G Applications
There are a lot of ON Semiconductor MMBT2369LT3G applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
