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MMBT2369LT3G

  • MMBT2369LT3G
  • MMBT2369LT3G

MMBT2369LT3G

MMBT2369LT3G

ON Semiconductor

MMBT2369LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT2369LT3G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MMBT2369
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 350mV
Current - Collector Cutoff (Max) 400nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 15V
Max Frequency 1MHz
Collector Emitter Saturation Voltage 250mV
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 4.5V
hFE Min 40
Height 1.11mm
Length 3.04mm
Width 2.64mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.051661 $0.051661
10 $0.048737 $0.48737
100 $0.045978 $4.5978
500 $0.043376 $21.688
1000 $0.040920 $40.92
MMBT2369LT3G Product Details

MMBT2369LT3G Overview


DC current gain in this device equals 40 @ 10mA 350mV, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 1mA, 10mA.Emitter base voltages of 4.5V can achieve high levels of efficiency.A maximum collector current of 200mA volts is possible.

MMBT2369LT3G Features


the DC current gain for this device is 40 @ 10mA 350mV
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V

MMBT2369LT3G Applications


There are a lot of ON Semiconductor MMBT2369LT3G applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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