BD682G Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 1.5A 3V DC current gain.With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 30mA, 1.5A.For high efficiency, the continuous collector voltage must be kept at 4A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

BD682G Features

the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A

BD682G Applications

There are a lot of ON Semiconductor BD682G applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting