BSS138W-7-F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website
SOT-23
BSS138W-7-F Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
3.5Ohm
Additional Feature
LOW THRESHOLD
Subcategory
FET General Purpose Powers
Voltage - Rated DC
50V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
200mA
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Number of Channels
1
Voltage
50V
Power Dissipation-Max
200mW Ta
Element Configuration
Single
Current
2A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
200mW
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.5 Ω @ 220mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V
Current - Continuous Drain (Id) @ 25°C
200mA Ta
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
200mA
Threshold Voltage
1.2V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
75V
Dual Supply Voltage
50V
Nominal Vgs
1.2 V
Feedback Cap-Max (Crss)
8 pF
Height
1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.08400
$0.252
6,000
$0.07630
$0.4578
15,000
$0.06860
$1.029
30,000
$0.06475
$1.9425
75,000
$0.05821
$4.36575
150,000
$0.05628
$8.442
BSS138W-7-F Product Details
BSS138W-7-F Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 50pF @ 10V.The drain current is?the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 200mA. Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=75V, and this device has a drain-to-source breakdown voltage of 75V voltage.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1.2V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
BSS138W-7-F Features
a continuous drain current (ID) of 200mA a drain-to-source breakdown voltage of 75V voltage the turn-off delay time is 20 ns a threshold voltage of 1.2V
BSS138W-7-F Applications
There are a lot of Diodes Incorporated BSS138W-7-F applications of single MOSFETs transistors.
Industrial Power Supplies
Telecom 1 Sever Power Supplies
Synchronous Rectification
General Purpose Interfacing Switch
LCD/LED/ PDP TV Lighting
DC/DC converters
AC-DC Power Supply
Load switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
PFC stages, hard switching PWM stages and resonant switching